N-Channel MOSFET, 5.6 A, 100 V, 3-Pin SOT-223 onsemi FDT1600N10ALZ
- RS Stock No.:
- 166-2305
- Mfr. Part No.:
- FDT1600N10ALZ
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 12/06/2024, delivery within 6 working days
Added
Price (VAT excluded) Each (On a Reel of 4000)
TWD9.90
(exc. GST)
TWD10.40
(inc. GST)
| Units | Per unit | Per Reel* |
| 4000 - 16000 | TWD9.90 | TWD39,600.00 |
| 20000 + | TWD9.40 | TWD37,600.00 |
| *price indicative | ||
- RS Stock No.:
- 166-2305
- Mfr. Part No.:
- FDT1600N10ALZ
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-223 |
| Series | PowerTrench |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 375 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.4V |
| Maximum Power Dissipation | 10.42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 3.7mm |
| Length | 6.7mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 2.9 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.7mm |