P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MagnaChip MDS3603URH

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Discontinued product

Product overview and Technical data sheets

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Width	4mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	38.4 nC @ 10 V
Length	5mm
Forward Diode Voltage	1V
Height	1.5mm
Minimum Operating Temperature	-55 °C