SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
- RS Stock No.:
- 162-9713
- Mfr. Part No.:
- C3M0065090J
- Manufacturer:
- Wolfspeed
200 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 50)
TWD503.00
(exc. GST)
TWD528.15
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | TWD503.00 | TWD25,150.00 |
| 250 + | TWD452.70 | TWD22,635.00 |
| *price indicative | ||
- RS Stock No.:
- 162-9713
- Mfr. Part No.:
- C3M0065090J
- Manufacturer:
- Wolfspeed
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +25 V |
| Width | 10.99mm |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 30 nC @ 15 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 10.23mm |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |
| Forward Diode Voltage | 4.4V |