SCT2280KEC SiC N-Channel MOSFET, 14 A, 1200 V SCT2280KE, 3-Pin TO-247 ROHM

  • RS Stock No. 124-6854P
  • Mfr. Part No. SCT2280KEC
  • Manufacturer ROHM
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

MOSFET Transistors, ROHM Semiconductor

Attribute Value
Channel Type N
Maximum Continuous Drain Current 14 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 388 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.6V
Maximum Power Dissipation 108 W
Maximum Gate Source Voltage -6 V, +22 V
Number of Elements per Chip 1
Transistor Material SiC
Forward Diode Voltage 4V
Length 20.95mm
Maximum Operating Temperature +175 °C
Series SCT2280KE
Height 5.03mm
Typical Gate Charge @ Vgs 36 nC @ 18 V
Width 15.9mm
Temporarily out of stock - back order for despatch when stock is available
Price (VAT excluded) Each (Supplied in a Tube)
TWD 331.00
(exc. GST)
TWD 348.00
(inc. GST)
Per unit
5 - 9
10 - 24
25 - 49
50 +
Packaging Options: