SCT2280KEC SiC N-Channel MOSFET, 14 A, 1200 V SCT2280KE, 3-Pin TO-247 ROHM

  • RS Stock No. 124-6854
  • Mfr. Part No. SCT2280KEC
  • Manufacturer ROHM
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

MOSFET Transistors, ROHM Semiconductor

Attribute Value
Channel Type N
Maximum Continuous Drain Current 14 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 388 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.6V
Maximum Power Dissipation 108 W
Maximum Gate Source Voltage -6 V, +22 V
Number of Elements per Chip 1
Height 5.03mm
Series SCT2280KE
Maximum Operating Temperature +175 °C
Length 20.95mm
Forward Diode Voltage 4V
Typical Gate Charge @ Vgs 36 nC @ 18 V
Width 15.9mm
Transistor Material SiC
7 Within 6 working day(s) (Global stock)
5 Within 4 working day(s) (Global stock)
Price (VAT excluded) Each
Was TWD349.00
TWD 344.00
(exc. GST)
TWD 361.00
(inc. GST)
Per unit
1 - 4
5 - 9
10 - 24
25 - 49
50 +