SiC N-Channel MOSFET, 22 A, 1200 V, 3-Pin TO-247 ROHM SCT2160KEC

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Discontinued product

Product overview and Technical data sheets

MOSFET Transistors, ROHM Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Series	SCT2160KE
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	226 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	165 W
Maximum Gate Source Voltage	-6 V, +22 V
Number of Elements per Chip	1
Length	20.95mm
Transistor Material	SiC
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	62 nC @ 18 V
Width	15.9mm
Height	5.03mm
Forward Diode Voltage	4.1V