SCT2120AFC SiC N-Channel MOSFET, 29 A, 650 V SCT2120AF, 3-Pin TO-220AB ROHM

  • RS Stock No. 124-6852
  • Mfr. Part No. SCT2120AFC
  • Manufacturer ROHM
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

MOSFET Transistors, ROHM Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 29 A
Maximum Drain Source Voltage 650 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 156 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.6V
Maximum Power Dissipation 165 W
Maximum Gate Source Voltage -6 V, +22 V
Number of Elements per Chip 1
Width 8.63mm
Height 4.45mm
Length 10.26mm
Forward Diode Voltage 4.3V
Typical Gate Charge @ Vgs 61 nC @ 18 V
Transistor Material SiC
Series SCT2120AF
Maximum Operating Temperature +175 °C
3 In stock for delivery within 6 working days
Price (VAT excluded) Each
Was TWD452.00
TWD 446.00
(exc. GST)
TWD 468.00
(inc. GST)
units
Per unit
1 - 4
TWD446.00
5 - 9
TWD430.00
10 - 24
TWD399.00
25 - 49
TWD379.00
50 +
TWD368.00