SiC N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB ROHM SCT2120AFC

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Discontinued product

Product overview and Technical data sheets

MOSFET Transistors, ROHM Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	650 V
Series	SCT2120AF
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	165 W
Maximum Gate Source Voltage	-6 V, +22 V
Length	10.26mm
Typical Gate Charge @ Vgs	61 nC @ 18 V
Maximum Operating Temperature	+175 °C
Width	8.63mm
Number of Elements per Chip	1
Transistor Material	SiC
Height	4.45mm
Forward Diode Voltage	4.3V