IRF60B217 N-Channel MOSFET, 60 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 123-6144
  • Mfr. Part No. IRF60B217
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 60 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 9 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.7V
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 83 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Maximum Operating Temperature +175 °C
Forward Diode Voltage 1.2V
Length 10.67mm
Minimum Operating Temperature -55 °C
Height 16.51mm
Typical Gate Charge @ Vgs 44 nC @ 10 V
Series StrongIRFET
Width 4.83mm
5980 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Pack of 10)
TWD 41.90
(exc. GST)
TWD 44.00
(inc. GST)
units
Per unit
Per Pack*
10 - 40
TWD41.90
TWD419.00
50 - 240
TWD39.50
TWD395.00
250 - 490
TWD31.80
TWD318.00
500 - 1240
TWD30.40
TWD304.00
1250 +
TWD28.30
TWD283.00
*price indicative
Packaging Options: