Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7
- RS Stock No.:
- 121-9598
- Mfr. Part No.:
- DMG6602SVT-7
- Manufacturer:
- DiodesZetex
75000 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (On a Reel of 3000)
TWD16.00
(exc. GST)
TWD16.80
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | TWD16.00 | TWD48,000.00 |
| 6000 - 9000 | TWD15.60 | TWD46,800.00 |
| 12000 + | TWD15.10 | TWD45,300.00 |
| *price indicative | ||
- RS Stock No.:
- 121-9598
- Mfr. Part No.:
- DMG6602SVT-7
- Manufacturer:
- DiodesZetex
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, Diodes Inc.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Diodes Inc.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.1 A, 3.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSOT-26 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 100 mΩ, 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 1.27 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V, 9 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 1.6mm |
| Number of Elements per Chip | 2 |
| Length | 2.9mm |
| Height | 0.9mm |
| Minimum Operating Temperature | -55 °C |