N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
100 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Pack of 5)
TWD115.40
(exc. GST)
TWD121.17
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 5 | TWD115.40 | TWD577.00 |
| 10 - 10 | TWD112.60 | TWD563.00 |
| 15 + | TWD105.40 | TWD527.00 |
| *price indicative | ||
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | CoolMOS P6 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 151 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 16.13mm |
| Transistor Material | Si |
| Width | 5.21mm |
| Height | 21.1mm |
| Forward Diode Voltage | 0.9V |
| Minimum Operating Temperature | -55 °C |