N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
- RS Stock No.:
- 194-259
- Mfr. Part No.:
- IXFN180N15P
- Manufacturer:
- IXYS
5 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each
TWD886.00
(exc. GST)
TWD930.30
(inc. GST)
| Units | Per unit |
| 1 - 2 | TWD886.00 |
| 3 + | TWD864.00 |
- RS Stock No.:
- 194-259
- Mfr. Part No.:
- IXFN180N15P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 150 A |
| Maximum Drain Source Voltage | 150 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 11 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 680 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 38.23mm |
| Width | 25.42mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |