N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXYS IXFN24N100
- RS Stock No.:
- 194-091
- Mfr. Part No.:
- IXFN24N100
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 07/08/2024, delivery within 6 working days
Added
Price (VAT excluded) Each
TWD1,531.00
(exc. GST)
TWD1,607.55
(inc. GST)
| Units | Per unit |
| 1 - 2 | TWD1,531.00 |
| 3 - 4 | TWD1,492.00 |
| 5 + | TWD1,468.00 |
- RS Stock No.:
- 194-091
- Mfr. Part No.:
- IXFN24N100
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 1000 V |
| Series | HiperFET |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 390 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 568 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Width | 25.42mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 267 nC @ 10 V |
| Transistor Material | Si |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |