N-Channel MOSFET, 240 A, 60 V, 7-Pin D2PAK-7 Infineon IRFS7530TRL7PP
- RS Stock No.:
- 124-9056
- Mfr. Part No.:
- IRFS7530TRL7PP
- Manufacturer:
- Infineon
18400 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (On a Reel of 800)
TWD74.80
(exc. GST)
TWD78.54
(inc. GST)
| Units | Per unit | Per Reel* |
| 800 - 3200 | TWD74.80 | TWD59,840.00 |
| 4000 + | TWD71.10 | TWD56,880.00 |
| *price indicative | ||
- RS Stock No.:
- 124-9056
- Mfr. Part No.:
- IRFS7530TRL7PP
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TW
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 240 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK-7 |
| Series | StrongIRFET |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 1.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 236 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 9.65mm |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |