Renesas NE3514S02-A N-Channel JFET, 4 V, Idss 15 → 70mA, 4-Pin SO2

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel HEMT, Renesas

A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifications
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 15 → 70mA
Maximum Drain Source Voltage 4 V
Maximum Gate Source Voltage -3 V
Configuration Single
Transistor Configuration Single
Mounting Type Surface Mount
Package Type SO2
Pin Count 4
Dimensions 2.6 x 2.6 x 1.5mm
Height 1.5mm
Length 2.6mm
Maximum Operating Temperature +125 °C
Width 2.6mm
Temporarily out of stock - back order for despatch 30/03/2020, delivery within 6 working days
Price (VAT excluded) Each (In a Pack of 10)
TWD 42.60
(exc. GST)
TWD 44.70
(inc. GST)
units
Per unit
Per Pack*
10 - 10
TWD42.60
TWD426.00
20 - 40
TWD41.80
TWD418.00
50 - 90
TWD36.10
TWD361.00
100 - 190
TWD30.50
TWD305.00
200 +
TWD27.00
TWD270.00
*price indicative
Packaging Options: