Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS Stock No.:
- 796-5055
- Mfr. Part No.:
- GT20J341
- Manufacturer:
- Toshiba
166 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each
TWD68.00
(exc. GST)
TWD71.40
(inc. GST)
| Units | Per unit |
| 1 - 12 | TWD68.00 |
| 13 - 24 | TWD66.00 |
| 25 + | TWD65.00 |
- RS Stock No.:
- 796-5055
- Mfr. Part No.:
- GT20J341
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 45 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |