Infineon IRG4BH20K-LPBF IGBT, 11 A 1200 V, 3-Pin I2PAK (TO-262), Through Hole
- RS Stock No.:
- 650-3476
- Mfr. Part No.:
- IRG4BH20K-LPBF
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 650-3476
- Mfr. Part No.:
- IRG4BH20K-LPBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 11 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 4.83 x 9.65mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |