STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No. 178-1479
- Mfr. Part No. STGP7NC60HD
- Manufacturer STMicroelectronics
Product overview and Technical data sheets
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 25 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 9.15mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
1450 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 50)
TWD
45.90
(exc. GST)
TWD
48.20
(inc. GST)
units
Per unit
Per Tube*
50 +
TWD45.90
TWD2,295.00
*price indicative
