- RS Stock No.:
- 877-2879
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
2385 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Pack of 5)
TWD67.40
(exc. GST)
TWD70.77
(inc. GST)
Units | Per unit | Per Pack* |
5 - 620 | TWD67.40 | TWD337.00 |
625 - 1245 | TWD65.60 | TWD328.00 |
1250 + | TWD64.80 | TWD324.00 |
*price indicative |
- RS Stock No.:
- 877-2879
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 75 W |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 6.6 x 6.2 x 2.4mm |
Energy Rating | 12.68mJ |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Gate Capacitance | 430pF |