- RS Stock No.:
- 747-1109
- Mfr. Part No.:
- 2MBi600VE-120-50
- Manufacturer:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 747-1109
- Mfr. Part No.:
- 2MBi600VE-120-50
- Manufacturer:
- Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 700 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 4.8 kW |
Configuration | Series |
Package Type | M277 |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 110 x 80 x 30mm |
Maximum Operating Temperature | +150 °C |