Semikron SKM150GB12T4 , SEMITRANS2 , N-Channel Dual Half Bridge IGBT Module, 232 A max, 1200 V, Panel Mount

  • RS Stock No. 687-4964
  • Mfr. Part No. SKM150GB12T4
  • Manufacturer Semikron
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 232 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS2
Pin Count 7
Dimensions 94 x 34 x 30.1mm
Height 30.1mm
Length 94mm
Maximum Operating Temperature +175 °C
Width 34mm
Minimum Operating Temperature -40 °C
22 In stock for delivery within 6 working days
Price (VAT excluded) Each
TWD 3,267.00
(exc. GST)
TWD 3,430.00
(inc. GST)
units
Per unit
1 - 1
TWD3,267.00
2 - 4
TWD2,945.00
5 - 9
TWD2,782.00
10 - 19
TWD2,758.00
20 +
TWD2,732.00