Semikron SKM100GB125DN, SEMITRANS2 , N-Channel Dual Half Bridge IGBT Module, 100 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2410
  • Mfr. Part No. SKM100GB125DN
  • Manufacturer Semikron
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

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IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual Half Bridge
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS2
Pin Count 7
Dimensions 94.5 x 34.5 x 30.5mm
Height 30.5mm
Length 94.5mm
Maximum Operating Temperature +150 °C
Width 34.5mm
Minimum Operating Temperature -40 °C
141 In stock for delivery within 6 working days
Price (VAT excluded) Each
Was TWD4,500.00
TWD 4,147.00
(exc. GST)
TWD 4,354.00
(inc. GST)
units
Per unit
1 - 4
TWD4,147.00
5 - 9
TWD3,878.00
10 +
TWD3,812.00