IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
10 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each
TWD1,136.00
(exc. GST)
TWD1,192.80
(inc. GST)
| Units | Per unit |
| 1 - 2 | TWD1,136.00 |
| 3 - 4 | TWD1,107.00 |
| 5 + | TWD1,091.00 |
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 320 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 735 W |
| Configuration | Single |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 5kHz |
| Transistor Configuration | Common Emitter |
| Dimensions | 38.23 x 25.07 x 9.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |