IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Manufacturer:
- IXYS
Available for back order.
Added
Price (VAT excluded) Each
TWD4,132.00
(exc. GST)
TWD4,338.60
(inc. GST)
| Units | Per unit |
| 1 - 4 | TWD4,132.00 |
| 5 - 9 | TWD4,010.00 |
| 10 - 49 | TWD3,861.00 |
| 50 + | TWD3,712.00 |
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 270 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | Y3 DCB |
| Configuration | Series |
| Mounting Type | Screw Mount |
| Channel Type | N |
| Pin Count | 7 |
| Transistor Configuration | Series |
| Dimensions | 110 x 62 x 30mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |