Cypress Semiconductor, CY15E016Q-SXE

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15E016Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The CY15E016Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15E016Q ideal for nonvolatile memory applications requiring frequent or rapid writes.

Attribute Value
Memory Size 16kbit
Organisation 2K x 8 bit
Interface Type Serial-SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Maximum Operating Supply Voltage 5.5 V
Width 3.98mm
Height 1.47mm
Maximum Operating Temperature +125 °C
Number of Words 2K
Automotive Standard AEC-Q100
Minimum Operating Supply Voltage 4.5 V
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Temporarily out of stock - back order for despatch 02/06/2020, delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 97)
TWD 66.50
(exc. GST)
TWD 69.80
(inc. GST)
Per unit
Per Tube*
97 - 97
194 - 194
291 - 485
582 - 970
1067 +
*price indicative