Toshiba, RN1102 NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 1, 3-Pin ESM

  • RS Stock No. 540-6475
  • Mfr. Part No. RN1102(F)
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

Transistor with Built-in Resistor, BRT Series, Toshiba

Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly
Wide resistance-value range makes product suitable for diverse applications
Complementary to products from RN1101 / RN2101 to RN1118 / RN2118
Applications: switching, inverter circuits, interface circuits, driver circuits
SSM package

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Digital Transistors, Toshiba

Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 100 mA
Maximum Collector Emitter Voltage 50 V
Typical Input Resistor 10 kΩ
Mounting Type Surface Mount
Package Type ESM
Pin Count 3
Minimum DC Current Gain 50
Transistor Configuration Single
Maximum Collector Emitter Saturation Voltage 0.3 V
Maximum Emitter Base Voltage 10 V
Typical Resistor Ratio 1
Length 1.6mm
Height 0.7mm
Maximum Operating Temperature +150 °C
Dimensions 1.6 x 0.8 x 0.7mm
Minimum Operating Temperature -55 °C
Width 0.8mm
50 Within 6 working day(s) (Global stock)
635 Within 4 working day(s) (Global stock)
Price (VAT excluded) Each (In a Pack of 5)
TWD 3.40
(exc. GST)
TWD 3.60
(inc. GST)
units
Per unit
Per Pack*
5 - 20
TWD3.40
TWD17.00
25 - 120
TWD3.20
TWD16.00
125 - 245
TWD2.80
TWD14.00
250 - 495
TWD2.60
TWD13.00
500 +
TWD2.40
TWD12.00
*price indicative
Packaging Options: