Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343
- RS Stock No.:
- 145-8845
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Discontinued product
- RS Stock No.:
- 145-8845
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Bipolar Transistors, Infineon
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 50 mA |
| Maximum Collector Emitter Voltage | 4.1 V |
| Package Type | SOT-343 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 200 mW |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 4.8 V |
| Maximum Emitter Base Voltage | 0.5 V |
| Maximum Operating Frequency | 45 GHz |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Dimensions | 2 x 1.25 x 0.9mm |
| Maximum Operating Temperature | +150 °C |