JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 663-9077
Mfr. Part No.CPH5905H-TL-E
BrandSanyo
TWD14.40
Each (In a Pack of 5)
units
N - 15 V - -15V Dual Emitter Drain - - Surface Mount CPH 5 2.9pF 10pF 2.9 x 1.6 x 0.9mm
RS Stock No. 166-3094
Mfr. Part No.MMBFJ176
TWD4.60
Each (On a Reel of 3000)
units
P -2 → -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 806-4318
Mfr. Part No.MMBFJ270
TWD12.90
Each (In a Pack of 50)
units
P -2 → -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 626-2282
Mfr. Part No.BF510,215
BrandNXP
TWD30.30
Each (In a Pack of 10)
units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-3093
Mfr. Part No.MMBFJ111
TWD3.30
Each (On a Reel of 3000)
units
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
TWD4.50
Each (On a Reel of 3000)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 761-4524
Mfr. Part No.MMBFJ113
TWD11.20
Each (In a Pack of 25)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 2508956507
Mfr. Part No.NTE451
TWD64.00
Each
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RS Stock No. 2508963606
Mfr. Part No.NTE312
TWD77.00
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RS Stock No. 2508963583
Mfr. Part No.NTE133
TWD145.00
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RS Stock No. 2508963612
Mfr. Part No.NTE457
TWD51.00
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RS Stock No. 2508955453
Mfr. Part No.NTE466
TWD222.00
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