JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
TWD3.70
Each (On a Reel of 3000)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 626-2412
Mfr. Part No.BF861C,215
BrandNXP
TWD23.40
Each (In a Pack of 10)
units
N 12 → 25mA 25 V +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-0320
Mfr. Part No.TF414T5G
TWD2.70
Each (On a Reel of 8000)
units
N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 166-2224
Mfr. Part No.MMBFJ270
TWD4.00
Each (On a Reel of 3000)
units
P -2 → -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 166-3077
Mfr. Part No.MMBF4093
TWD2.60
Each (On a Reel of 3000)
units
N Min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 545-213
Mfr. Part No.2SK3666-3-TB-E
BrandSanyo
TWD6.00
Each (In a Pack of 25)
units
N - 30 V - -30V Single - 200 Ω Surface Mount CP 3 1.1pF 4pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
TWD4.10
Each (On a Reel of 3000)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4311
Mfr. Part No.MMBFJ111
TWD8.70
Each (On a Tape of 50)
units
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS Stock No. 166-1831
Mfr. Part No.MMBFJ113
TWD2.60
Each (On a Reel of 3000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 663-9058
Mfr. Part No.2SK3557-6-TB-E
BrandSanyo
TWD14.40
Each (In a Pack of 5)
units
N - 15 V - -15V Single - - Surface Mount CP 3 2.9pF 10pF 2.9 x 1.5 x 1.1mm
RS Stock No. 663-9077
Mfr. Part No.CPH5905H-TL-E
BrandSanyo
TWD14.40
Each (In a Pack of 5)
units
N - 15 V - -15V Dual Emitter Drain - - Surface Mount CPH 5 2.9pF 10pF 2.9 x 1.6 x 0.9mm
RS Stock No. 792-5173
Mfr. Part No.2SK932-23-TB-E
TWD11.40
Each (On a Tape of 25)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0319
Mfr. Part No.TF412ST5G
TWD2.90
Each (On a Reel of 8000)
units
N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
TWD2.60
Each (On a Reel of 3000)
units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 124-2284
Mfr. Part No.BF861C,215
BrandNXP
TWD9.90
Each (On a Reel of 3000)
units
N 12 → 25mA 25 V -25 V, +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
TWD2.70
Each (On a Reel of 3000)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-3085
Mfr. Part No.MMBF5103
TWD2.80
Each (On a Reel of 3000)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 800-9364
Mfr. Part No.2SK3666-2-TB-E
TWD3.70
Each (In a Pack of 100)
units
N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1766
Mfr. Part No.J113
TWD9.20
Each (In a Pack of 50)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
TWD11.20
Each (In a Pack of 25)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm