JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-2223
Mfr. Part No.MMBFJ110
TWD4.90
Each (On a Reel of 3000)
units
N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
TWD12.40
Each (In a Pack of 10)
units
N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 760-6034
Mfr. Part No.MMBF5459
TWD10.00
Each (In a Pack of 50)
units
N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 169-7867
Mfr. Part No.DSK5J01P0L
BrandPanasonic
TWD5.90
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
TWD4.30
Each (On a Reel of 3000)
units
N 10 → 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
TWD2.60
Each (On a Reel of 3000)
units
N 1.2 → 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
TWD9.10
Each (In a Pack of 50)
units
N Min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 145-5553
Mfr. Part No.MMBFJ112
TWD3.00
Each (On a Reel of 3000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 806-4302
Mfr. Part No.MMBFJ110
TWD12.50
Each (In a Pack of 25)
units
N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS Stock No. 124-2284
Mfr. Part No.BF861C,215
BrandNXP
TWD11.60
Each (On a Reel of 3000)
units
N 12 → 25mA 25 V -25 V, +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
TWD9.60
Each (On a Reel of 3000)
units
N 20 → 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 166-3093
Mfr. Part No.MMBFJ111
TWD3.20
Each (On a Reel of 3000)
units
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS Stock No. 626-2355
Mfr. Part No.BF556A,215
BrandNXP
TWD23.00
Each (In a Pack of 10)
units
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-2282
Mfr. Part No.BF510,215
BrandNXP
TWD22.70
Each (In a Pack of 10)
units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
TWD4.10
Each (On a Reel of 3000)
units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 920-9928
Mfr. Part No.TF414T5G
TWD4.50
Each (In a Pack of 50)
units
N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 145-5192
Mfr. Part No.2SK3666-2-TB-E
TWD2.60
Each (On a Reel of 3000)
units
N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4324
Mfr. Part No.MMBFJ310
TWD8.30
Each (In a Pack of 50)
units
N 24 → 60mA 10 V -25 V - Single Single - Surface Mount SOT-23 3 2.5pF 5pF 2.92 x 1.3 x 0.93mm
RS Stock No. 626-2412
Mfr. Part No.BF861C,215
BrandNXP
TWD27.00
Each (In a Pack of 10)
units
N 12 → 25mA 25 V +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 169-7868
Mfr. Part No.DSK5J01R0L
BrandPanasonic
TWD5.90
Each (On a Reel of 3000)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm