Bridge Rectifiers

Bridge rectifiers are discrete semiconductors as they have a single semiconductor device i.e. a diode and are the opposite of an integrated circuit semiconductor which has various devices on a single piece of semiconductor. RS Components offer an extensive range of high-quality components from leading brands including ON Semiconductor, Vishay, IXYS and Semikron.

What do Bridge Rectifiers do?

The diode bridge circuit was invented in 1895 and Leo Graetz designed a similar circuit, so they can also be known as a Graetz circuit or Graetz bridge. A bridge rectifier is built out of 4 or more diodes that are arranged in a specific configuration: the namesake bridge. This diode bridge can convert an input of alternating current (AC) into direct current (DC), a basic function for most electronic devices. It also provides the same output polarity for either input polarity. These devices work with a two-wire AC input, have two diode drops in their design and offer full-wave rectification.

What are Bridge Rectifiers used for?

Bridge Rectifiers are commonly used in power supplies that provide necessary DC voltage for the electronic components or devices and are found in various applications such as home appliances and white merchandise. Also, such devices are popular with electronic hobbyists who enjoy constructing circuits. Rectifiers are usually classified into single-phase and three-phase and then split again into uncontrolled, half controlled and full controlled rectifiers. They come in various package and mounting types including screw mount, surface mount and through-hole.

What are the advantages of Bridge Rectifiers?

A high peak inverse voltage (PIV) which is ideal for high voltage applications A high transformer utilisation factor Constructed with or without a transformer - does not need a centre tap transformer.

What are the disadvantages of a Bridge Rectifier?

Disadvantages of bridge rectifiers More expensive than other rectifiers as it requires four diodes Not ideal when a small voltage is required to be rectified Since bridge rectifiers are discrete devices, some of them need to be purchased along with other devices to achieve the desired functionality for which they are intended. For some engineering needs, the ability to purchase discrete semiconductors makes prototyping and production more affordable.


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Description Price Bridge Type Peak Average Forward Current Peak Reverse Repetitive Voltage Mounting Type Package Type Pin Count Diode Technology Diode Type Configuration Peak Non-Repetitive Forward Surge Current Maximum Operating Temperature Minimum Operating Temperature Peak Forward Voltage Peak Reverse Current
RS Stock No. 803-1920
Mfr. Part No.GBPC3508
TWD148.00
Each (In a Pack of 2)
units
Single Phase 35A 800V Screw Mount GBPC 4 - - Single 400A +150 °C -55 °C 1.1V 500µA
RS Stock No. 761-3363
Mfr. Part No.DF10S
TWD15.70
Each (In a Pack of 10)
units
Single Phase 1.5A 1000V Surface Mount SDIP 4 - - Single 50A +150 °C -55 °C 1.1V 500µA
RS Stock No. 166-2778
Mfr. Part No.DF10S
TWD6.20
Each (On a Reel of 1500)
units
Single Phase 1.5A 1000V Surface Mount SDIP 4 Silicon Junction - Single 50A +150 °C -55 °C 1.1V 500µA
RS Stock No. 803-1939
Mfr. Part No.GBPC3510
TWD112.00
Each (In a Pack of 2)
units
Single Phase 35A 1000V Screw Mount GBPC 4 Silicon Junction - Single 400A +150 °C -55 °C 1.1V 500µA
RS Stock No. 903-4254
Mfr. Part No.GBU8J
TWD69.80
Each (In a Pack of 5)
units
Single Phase 8A 600V Through Hole GBU 4L 4 - - Single 200A +150 °C -55 °C 1V 5µA
RS Stock No. 166-3325
Mfr. Part No.GBU8J
TWD35.30
Each (In a Bag of 500)
units
Single Phase 8A 600V Through Hole GBU 4L 4 Silicon Junction - Single 200A +150 °C -55 °C 1V 5µA
RS Stock No. 146-1999
Mfr. Part No.GBPC3504
TWD117.30
Each (In a Bag of 50)
units
Single Phase 35A 400V Screw Mount GBPC 4 Silicon Junction - Single 400A +150 °C -55 °C 1.1V 500µA
RS Stock No. 166-3156
Mfr. Part No.MDB8S
TWD3.30
Each (On a Reel of 4000)
units
Single Phase 1A 800V Surface Mount MicroDIP 4 Silicon Junction - Single 30A +150 °C -55 °C 1.1V 10µA
RS Stock No. 145-4287
Mfr. Part No.DF06M
TWD17.30
Each (In a Tube of 50)
units
Single Phase 1.5A 600V Through Hole PDIP 4 Silicon Junction - Single 50A +150 °C -55 °C 1.1V 5µA
RS Stock No. 772-9348
Mfr. Part No.MDB8S
TWD9.90
Each (On a Tape of 25)
units
Single Phase 1A 800V Surface Mount MicroDIP 4 - - Single 30A +150 °C -55 °C 1.1V 10µA
RS Stock No. 903-4245
Mfr. Part No.GBPC3502
TWD129.80
Each (In a Pack of 5)
units
Single Phase 35A 200V Through Hole GBPC 4L 4 Silicon Junction - Single 400A +150 °C -55 °C 1.1V 5µA
RS Stock No. 163-0279
Mfr. Part No.NSR2030QMUTAG
TWD12.20
Each (On a Reel of 3000)
units
Single Phase 2A 30V Surface Mount U-DFN3535 4 Schottky - Single 12.5A +125 °C - 650mV 20µA
RS Stock No. 803-1904
Mfr. Part No.GBPC2506
TWD136.50
Each (In a Pack of 2)
units
Single Phase 25A 600V Screw Mount GBPC 4 - - Single 300A +150 °C -55 °C 1.1V 500µA
RS Stock No. 670-8860
Mfr. Part No.DF06M
TWD17.30
Each (In a Pack of 10)
units
Single Phase 1.5A 600V Through Hole PDIP 4 - - Single 50A +150 °C -55 °C 1.1V 5µA
RS Stock No. 803-1879
Mfr. Part No.GBPC1502
TWD119.50
Each (In a Pack of 2)
units
Single Phase 15A 200V Screw Mount GBPC 4 Silicon Junction - Single 300A +150 °C -55 °C 1.1V 500µA
RS Stock No. 166-2983
Mfr. Part No.GBPC1502
TWD115.00
Each (In a Bag of 50)
units
Single Phase 15A 200V Screw Mount GBPC 4 Silicon Junction - Single 300A +150 °C -55 °C 1.1V 500µA
RS Stock No. 803-1926
Mfr. Part No.GBPC3504
TWD136.50
Each (In a Pack of 2)
units
Single Phase 35A 400V Screw Mount GBPC 4 Silicon Junction - Single 400A +150 °C -55 °C 1.1V 500µA
RS Stock No. 145-5573
Mfr. Part No.GBPC2506
TWD115.00
Each (In a Box of 50)
units
Single Phase 25A 600V Screw Mount GBPC 4 Silicon Junction - Single 300A +150 °C -55 °C 1.1V 500µA
RS Stock No. 922-9562
Mfr. Part No.NSR2030QMUTAG
TWD26.90
Each (In a Pack of 20)
units
Single Phase 2A 30V Surface Mount U-DFN3535 4 Schottky - Single 12.5A +125 °C - 650mV 20µA
RS Stock No. 805-3021
Mfr. Part No.NMLU1210TWG
TWD48.80
Each (In a Pack of 10)
units
Single Phase - - Surface Mount U-DFN4040 8 Schottky - - - +125 °C -55 °C 560mV 1mA