N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
- RS Stock No.:
- 802-4357
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 17/02/2025, delivery within 6 working days
Added
Price (VAT excluded) Each
TWD983.00
(exc. GST)
TWD1,032.15
(inc. GST)
| Units | Per unit |
| 1 - 6 | TWD983.00 |
| 7 + | TWD959.00 |
- RS Stock No.:
- 802-4357
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 210 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar3 |
| Package Type | PLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.89 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 20.29mm |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Transistor Material | Si |
| Width | 5.31mm |
| Height | 26.59mm |
| Minimum Operating Temperature | -55 °C |