- RS Stock No.:
- 111-6104
- Mfr. Part No.:
- FS35R12W1T4B11BOMA1
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 111-6104
- Mfr. Part No.:
- FS35R12W1T4B11BOMA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 65 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 225 W |
Configuration | 3 Phase Bridge |
Package Type | AG-EASY1B-1 |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | 3 Phase |
Dimensions | 33.8 x 48 x 12mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |